검색어 : 통합검색[001]
총 480,138건 중 1,000건 출력
, 96/100 페이지
-
951
- Universal shapes of self-organized semiconductor quantum dots: Striking similarities between InAs∕GaAs(001) and Ge∕Si(001)
- Costantini, G.; Rastelli, A.; Manzano, C.; Songmuang, R.; Schmidt, O. G.; Kern, K.; Kä nel, H. von; Max-Planck-Institut fü r Festkö rperforschung , Heisenbergstrasse 1, D-70569 Stuttgart, Germany; Max-Planck-Institut fü r Festkö rperforschung , Heisenbergstrasse 1, D-70569 Stuttgart, Germany; Max-Planck-Institut fü r Festkö rperforschung , Heisenbergstrasse 1, D-70569 Stuttgart, Germany; Max-Planck-Institut fü r Festkö rperforschung , Heisenbergstrasse 1, D-70569 Stuttgart, Germany; Max-Planck-Institut fü r Festkö rperforschung , Heisenbergstrasse 1, D-70569 Stuttgart, Germany; Max-Planck-Institut fü r Festkö rperforschung , Heisenbergstrasse 1, D-70569 Stuttgart, Germany; INFM and L-NESS, Dipartimento di Fisica, Politecnico di Milano a Como , Via Anzani 2, I-22100 Como, Italy; (Applied physics letters, v.85, 2004, pp.5673-5675)
-
952
- Kinetic growth manipulation of Si(001) homoepitaxy
- Esser, Marcus; Zoethout, Erwin; Zandvliet, Harold J.W.; Wormeester, Herbert; Poelsema, Bene; ; (Surface science, v.552, 2004, pp.35-45)
-
953
- Photoemission study of the surface electronic structure of Mo(001) and Mo(001)-2H
- Smith, Kevin E.; Kevan, Stephen D.; ; (Physical review. B, Condensed matter, v.45, 1992, pp.13642-13646)
-
954
- Al-GaAs (001) Schottky barrier formation
- Svensson, S. P.; Landgren, G.; Andersson, T. G.; Department of Physics, Chalmers University of Technology, S-412 96 Gö teborg, Sweden; Department of Physics, Chalmers University of Technology, S-412 96 Gö teborg, Sweden; Department of Physics, Chalmers University of Technology, S-412 96 Gö teborg, Sweden; (Journal of applied physics, v.54, 1983, pp.4474-4481)
-
955
- Ge(001) surface reconstruction with Sn impurities
- Noatschk, K.; Hofmann, E.V.S.; Dabrowski, J.; Curson, N.J.; Schroeder, T.; Klesse, W.M.; Seibold, G.; IHP - Leibniz-Institut fü r innovative Mikroelektronik; IHP - Leibniz-Institut fü r innovative Mikroelektronik; IHP - Leibniz-Institut fü r innovative Mikroelektronik; London Centre for Nanotechnology, UCL; IHP - Leibniz-Institut fü r innovative Mikroelektronik; IHP - Leibniz-Institut fü r innovative Mikroelektronik; Corresponding author.; (Surface science, v.713, 2021, pp.121912)
-
956
- Photoelectron holography of the si(001) surface.
- Nakatani, T; Nishimoto, H; Daimon, H; Suga, S; Namba, H; Ohta, T; Kagoshima, Y; Miyahara, T; ; (Journal of synchrotron radiation, v.3, 1996, pp.239-244)
-
957.
- 기체상 수소 원자와 Si(001) 표면에 화학 흡착된 수소 원자 사이의 반응
- 임선희
- 전남대학교 교육대학원, 국내석사, 45p., 1999
-
958
- Edge separation distribution in vicinal silicon (001)
- Kariotis, R.; ; (Surface science, v.268, 1992, pp.L258-L260)
-
959
- Incident Electron Wave-Field at Si(001) Surface by RHEED
- HORIO, Yoshimi; TAKAKUWA, Yuji; OGAWA, Shuichi; Daido University; IMRAM, Tohoku University; IMRAM, Tohoku University; (表面科學 = Journal of the Surface Science Society of Japan, v.34, 2013, pp.334-339)
-
960
- Scanning Tunneling Microscopy Study of GaAS(001) Surfaces [I]
- XUE, Qikun; HASHIZUME, Tomihiro; HASEGAWA, Yukio; AKIYAMA, Kotone; WATANABE, Yousuke; SAKURAI, Toshio; ; (表面科學 = Journal of the Surface Science Society of Japan, v.20, 1999, pp.262-271)
QUICK MENU
