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191
- Se passivation and regrowth of ZnSe(001) epilayers on GaAs(001)
- Jonker, B. T.; Krebs, J. J.; Prinz, G. A.; Naval Research Laboratory, Washington, DC 20375-5000; Naval Research Laboratory, Washington, DC 20375-5000; Naval Research Laboratory, Washington, DC 20375-5000; (Journal of applied physics, v.63, 1988, pp.5885-5887)
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192
- Segregation of point defects at the CuInSe<sub>2</sub>(001)/GaAs(001) interface
- Music, Denis; Keuter, Philipp; Corresponding author.; (Solid state communications, v.299, 2019, pp.113652)
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193
- RRx-001, A novel dinitroazetidine radiosensitizer
- Oronsky, Bryan; Scicinski, Jan; Ning, Shoucheng; Peehl, Donna; Oronsky, Arnold; Cabrales, Pedro; Bednarski, Mark; Knox, Susan; EpicentRx Inc, 800 W El Camino Real, Suite 180, Mountain View, CA 94040 USA; EpicentRx Inc, 800 W El Camino Real, Suite 180, Mountain View, CA 94040 USA; Stanford University, 875 Blake Wilbur Dr Clinic D, Stanford, CA 94305 USA; Stanford University, 875 Blake Wilbur Dr Clinic D, Stanford, CA 94305 USA; InterWest Partners, 2710 Sand Hill Rd #200, Menlo Park, CA 94025 USA; Department of Bioengineering, University of California San Diego (UCSD), 9500 Gilman Dr, La Jolla, CA 92093 USA; Stanford University, 875 Blake Wilbur Dr Clinic D, Stanford, CA 94305 USA; Stanford University, 875 Blake Wilbur Dr Clinic D, Stanford, CA 94305 USA; (Investigational new drugs : the journal of new anticancer agents, v.34, 2016, pp.371-377)
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194
- THE DIFFERENCE BETWEEN THE SURFACE RECONSTRUCTIONS OF AlAs(001) AND GaAs(001)
- SHEN, JIANHUA; JIANG, PING; XIE, XIDE; Surface Physics Laboratory (National Key Laboratory) and Department of Physics, Fudan University, Shanghai 200433, China; Surface Physics Laboratory (National Key Laboratory) and Department of Physics, Fudan University, Shanghai 200433, China; Surface Physics Laboratory (National Key Laboratory) and Department of Physics, Fudan University, Shanghai 200433, China; (Surface review and letters, v.6, 1999, pp.1167-1171)
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195
- Investigation of GeS (001)
- Lá znič ka, M.; ; (Czechoslovak journal of physics, v.28, 1978, pp.1031-1035)
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196
- Probing bimetallic surfaces with photoelectron diffraction: Au/Cu(001) and Fe/Cu(001)
- Tobin, J. G.; Hansen, J. C.; Wagner, M. K.; Department of Chemistry, University of Wisconsin, Madison, Wisconsin 53706; Department of Chemistry, University of Wisconsin, Madison, Wisconsin 53706; Department of Chemistry, University of Wisconsin, Madison, Wisconsin 53706; (Journal of vacuum science & technology. A, Vacuum, surfaces, and films, v.8, 1990, pp.2494-2496)
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197
- Structure and binding energies of unsaturated hydrocarbons on Si(001) and Ge(001)
- Cho, Jun-Hyung; Kim, Kwang S.; Morikawa, Yoshitada; Hanyang University Department of Physics, , 17 Haengdang-Dong, Seongdong-Ku, Seoul 133-791, Korea; Pohang University of Science and Technology National Creative Research Initiative Center for Superfunctional Materials, Department of Chemistry, Division of Molecular and Life Sciences, , San 31, Hyojadong, Namgu, Pohang 790-784, Korea; Osaka University The Institute of Scientific and Industrial Research, , 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan; (The Journal of chemical physics, v.124, 2006, pp.024716)
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198
- Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and films
- Neave, J. H.; Larsen, P. K.; Joyce, B. A.; Gowers, J. P.; van der Veen, J. F.; Philips Research Laboratories, Redhill, Surrey RH1 5HA, England; Philips Research Laboratories, Redhill, Surrey RH1 5HA, England; Philips Research Laboratories, Redhill, Surrey RH1 5HA, England; Philips Research Laboratories, Redhill, Surrey RH1 5HA, England; Philips Research Laboratories, Redhill, Surrey RH1 5HA, England; (Journal of vacuum science & technology an official journal of the American Vacuum Society. B, Microelectronics processing and phenomena, v.1, 1983, pp.668-674)
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199
- Temperature dependence of the interface anisotropy in Fe(001)/Ag(001) superlattices
- Barthé lé my, A.; Fert, A.; Etienne, P.; Cabanel, R.; Lequien, S.; ; (Journal of magnetism and magnetic materials, v.104, 1992, pp.1816-1818)
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200
- Preparation of Hydroxyl-Terminated Si(001) Substrates
- 이선숙; 백재윤; 안기석; 오진호; 김윤수; 한국화학연구원 화학소재연구부 박막재료연구실; 한국화학연구원 화학소재연구부 박막재료연구실; 한국화학연구원 화학소재연구부 박막재료연구실; 한국화학연구원 화학소재연구부 박막재료연구실; 히로시마대학 히로시마 방사광연구센터; (한국전기화학회 2003년도 추계총회 및 학술발표회, v.2003, 2003, pp.44-44)
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