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141
- Oxidation of ultrathin Fe(110) layers on Cr(110)
- Stierle, Andreas; Zabel, Hartmut; ; (Surface science, v.385, 1997, pp.310-317)
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142
- Structure and dynamics of hydrogenated GaAs(110) and InP(110) surfaces
- Fritsch, J; Eckert, A; Pavone, P; Schroder, U; Inst. fur Theor. Phys., Regensburg Univ., Germany; Inst. fur Theor. Phys., Regensburg Univ., Germany; Inst. fur Theor. Phys., Regensburg Univ., Germany; Inst. fur Theor. Phys., Regensburg Univ., Germany; (Journal of physics, an Institute of Physics journal. Condensed matter, v.7, 1995, pp.7717-7728)
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143
- Low-energy P+ ion channeling and implantation into Si(110), SiC(110), GaP(110) and GaAs(110)
- Rasulov, A. M.; Dzhurakhalov, A. A.; ; (Atomic materials design: modelling and characterization : proceedings of the E-MRS 2004 Spring meeting symposium H, v.2005, 2005, pp.148-152)
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144.
- L.v. Beethoven Piano Sonata Op.110에 관한 고찰
- 배혜진
- 계명대학교 대학원, 국내석사, ⅳ, 66, 2011
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145
- Surface atomic geometry of covalently bonded semiconductors: InSb(110) and its comparison with GaAs(110) and ZnTe(110)
- Duke, C. B.; Meyer, R. J.; Paton, A.; Yeh, J. L.; Tsang, J. C.; Kahn, A.; Mark, P.; Xerox Webster Research Center, Xerox Square-W114, Rochester, New York 14644; Xerox Webster Research Center, Xerox Square-W114, Rochester, New York 14644; Xerox Webster Research Center, Xerox Square-W114, Rochester, New York 14644; Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540; Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540; Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540; Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08540; (The Journal of vacuum science and technology, v.17, 1980, pp.501-505)
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146.
- (110) Si wafer에서 Fe 도핑된 GaN HEMTs의 특징
- 권한철
- 한양대학교 대학원, 국내석사, 41 p., 2016
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147
- Analysis of the activity of {110}〈110〉 slip in AA3103 by inverse modeling
- Crumbach, M.; Gottstein, G.; Corresponding author. Tel.: +49-241-80-2-68-68; fax: +49-241-80-2-23-01.; Institute for Metal Physics and Physical Metallurgy, RWTH-Aachen, Aachen, Germany; (Materials science & engineering. properties, microstructure and processing. A, Structural materials, v.387, 2004, pp.282-287)
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148
- Wirtschaftlichkeitsanalyse von Batteriespeichern im 110-kV-Netz
- Stö ckl, Benjamin; Klatzer, Thomas; Scheiber, Gerhild; Froschauer, Alexandra; Wogrin, Sonja; ; (Elektrotechnik und Informationstechnik : E&I, v.141, 2024, pp.340-347)
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149
- Growth temperature dependence of the crystalline morphology of SiGe films grown on Si(110) substrates with compositionally step-graded buffer
- Arimoto, K.; Watanabe, M.; Yamanaka, J.; Nakagawa, K.; Sawano, K.; Shiraki, Y.; Usami, N.; Nakajima, K.; Center for Crystal Science and Technology, Univ. of Yamanashi, 7-32 Miyamae-cho, Kofu, Yamanashi 400-8511, Japan; (Thin solid films, v.517, 2008, pp.235-238)
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150
- [Pyelonephritis in children: 110 cases]
- Lavoie, A; Cojocaru, N; Demers, P P; ; (Union médicale du Canada, v.99, 1970, pp.1094-1101)
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