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  • 111
    Edge dislocation of b= [001]/2 in the InAs nanostructure on InP(001)
    Wang, Y.L.; Wu, J.; Chen, Y.H.; Wang, Z.G.; Zeng, Y.P.; Chinese Academy and Sciences, Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing, China; Chinese Academy and Sciences, Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing, China; Chinese Academy and Sciences, Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing, China; Chinese Academy and Sciences, Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing, China; Chinese Academy and Sciences, Novel Materials Laboratory, Institute of Semiconductors, Beijing, China; (Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on, v.2004, 2004, pp.238-241)
  • 112
    The atomic and electronic structures of NiO(001)/Au(001) interfaces
    Visikovskiy, A.; Mitsuhara, K.; Hazama, M.; Kohyama, M.; Kido, Y.; Kyushu University 1 Department of Applied Quantum Physics and Nuclear Engineering, , Fukuoka 819-0395, Japan; Ritsumeikan University 2 Department of Physics, , Kusatsu, Shiga-ken 525-8577, Japan; Ritsumeikan University 2 Department of Physics, , Kusatsu, Shiga-ken 525-8577, Japan; AIST 3 Research Institute for Ubiquitous Energy Devices, , Ikeda, Osaka 563-8577, Japan; Ritsumeikan University 2 Department of Physics, , Kusatsu, Shiga-ken 525-8577, Japan; (The Journal of chemical physics, v.139, 2013, pp.144705)
  • 113
    Electrodeposition of Fe on n-type GaAs(001) and GaAlAs(001)
    Zangari, G.; Shao, Wenbo; Pattanaik, Gyana; Vutukuri, Srinivasulu; Shad, Rainer; ; (ECS transactions, v.3, 2006, pp.51-59)
  • 114
    Structural and magnetic properties of Fe films epitaxially grown on Pd[001]/Cu[001]/Si[001] by sputtering
    Choi, Tae Won; Yu, Sung Cho; Jang, Pyung Woo; Kim, Won Tae; Dept. of Phys., Chung-Buk Nat. Univ., Cheongju, South Korea; (IEEE transactions on magnetics, v.35, 1999, pp.3079-3081)
  • 115
    Prototyping distributed environments with 001
    Hamilton, M.; Hackler, R.; ; (Rapid System Prototyping, 1991. Shortening the Path from Specification to Prototype, Second International Workshop on, v.1991, 1991, pp.110-111)
  • 116
    Barrier-Height Imaging of Oxygen-adsorbed Si(001)2×1 and Ge(001)2×1 Surfaces
    Kurokawa, Shu; Yamashita, Hiroshi; Yoshikawa, Jun; Sakai, Akira; ; (Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers, v.38, 1999, pp.3845-3848)
  • 117
    Surface reconstructions on GaAs(001)
    Ohtake, Akihiro; National Institute for Materials Science (NIMS), Quantum Dot Research Center, 1-1 Namiki, Tsukuba 305-0044, Ibaraki, Japan; (Surface science reports, v.63, 2008, pp.295-327)
  • 118
    Commensurate and incommensurate phases on Si(001) and Ge(001) surfaces
    Zubkus, V.E.; Tornau, E.E.; ; (Surface science, v.216, 1989, pp.23-32)
  • 119
    Structural Properties of Anisotropic PtCo(001) and PtFe(001) Thin Films on MgO(001)
    Lairson, Bruce M.; Visokay, Mark R.; Brennan, Sean B.; Sinclair, Robert; Clemens, Bruce M.; ; (Materials Research Society symposia proceedings, v.311, 1993, pp.9)
  • 120
    Epitaxial growth of cubic WC<sub> <i>y</i> </sub>(001) on MgO(001)
    Fang, Peijiao; Wang, Baiwei; Mulligan, C.P.; Murray, T.M.; Khare, S.V.; Gall, Daniel; Department of Materials Science and Engineering, Rensselaer Polytechnic Institute; Department of Materials Science and Engineering, Rensselaer Polytechnic Institute; US Army Combat Capabilities Development Command, Armaments Center, Bené t Laboratories; Colleges of Nanoscale Science & Engineering, SUNY Polytechnic Institute; Department of Physics and Astronomy, University of Toledo; Department of Materials Science and Engineering, Rensselaer Polytechnic Institute; (Journal of alloys and compounds, v.860, 2021, pp.158403)

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