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111
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Edge dislocation of b= [001]/2 in the InAs nanostructure on InP(001)
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Wang, Y.L.;
Wu, J.;
Chen, Y.H.;
Wang, Z.G.;
Zeng, Y.P.;
Chinese Academy and Sciences, Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing, China;
Chinese Academy and Sciences, Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing, China;
Chinese Academy and Sciences, Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing, China;
Chinese Academy and Sciences, Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Beijing, China;
Chinese Academy and Sciences, Novel Materials Laboratory, Institute of Semiconductors, Beijing, China;
(Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. 13th International Conference on,
v.2004,
2004,
pp.238-241)
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112
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The atomic and electronic structures of NiO(001)/Au(001) interfaces
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Visikovskiy, A.;
Mitsuhara, K.;
Hazama, M.;
Kohyama, M.;
Kido, Y.;
Kyushu University 1 Department of Applied Quantum Physics and Nuclear Engineering, , Fukuoka 819-0395, Japan;
Ritsumeikan University 2 Department of Physics, , Kusatsu, Shiga-ken 525-8577, Japan;
Ritsumeikan University 2 Department of Physics, , Kusatsu, Shiga-ken 525-8577, Japan;
AIST 3 Research Institute for Ubiquitous Energy Devices, , Ikeda, Osaka 563-8577, Japan;
Ritsumeikan University 2 Department of Physics, , Kusatsu, Shiga-ken 525-8577, Japan;
(The Journal of chemical physics,
v.139,
2013,
pp.144705)
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113
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Electrodeposition of Fe on n-type GaAs(001) and GaAlAs(001)
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Zangari, G.;
Shao, Wenbo;
Pattanaik, Gyana;
Vutukuri, Srinivasulu;
Shad, Rainer;
;
(ECS transactions,
v.3,
2006,
pp.51-59)
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114
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Structural and magnetic properties of Fe films epitaxially grown on Pd[001]/Cu[001]/Si[001] by sputtering
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Choi, Tae Won;
Yu, Sung Cho;
Jang, Pyung Woo;
Kim, Won Tae;
Dept. of Phys., Chung-Buk Nat. Univ., Cheongju, South Korea;
(IEEE transactions on magnetics,
v.35,
1999,
pp.3079-3081)
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115
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Prototyping distributed environments with 001
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Hamilton, M.;
Hackler, R.;
;
(Rapid System Prototyping, 1991. Shortening the Path from Specification to Prototype, Second International Workshop on,
v.1991,
1991,
pp.110-111)
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116
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Barrier-Height Imaging of Oxygen-adsorbed Si(001)2×1 and Ge(001)2×1 Surfaces
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Kurokawa, Shu;
Yamashita, Hiroshi;
Yoshikawa, Jun;
Sakai, Akira;
;
(Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers,
v.38,
1999,
pp.3845-3848)
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117
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Surface reconstructions on GaAs(001)
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Ohtake, Akihiro;
National Institute for Materials Science (NIMS), Quantum Dot Research Center, 1-1 Namiki, Tsukuba 305-0044, Ibaraki, Japan;
(Surface science reports,
v.63,
2008,
pp.295-327)
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118
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Commensurate and incommensurate phases on Si(001) and Ge(001) surfaces
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Zubkus, V.E.;
Tornau, E.E.;
;
(Surface science,
v.216,
1989,
pp.23-32)
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119
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Structural Properties of Anisotropic PtCo(001) and PtFe(001) Thin Films on MgO(001)
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Lairson, Bruce M.;
Visokay, Mark R.;
Brennan, Sean B.;
Sinclair, Robert;
Clemens, Bruce M.;
;
(Materials Research Society symposia proceedings,
v.311,
1993,
pp.9)
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120
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Epitaxial growth of cubic WC<sub> <i>y</i> </sub>(001) on MgO(001)
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Fang, Peijiao;
Wang, Baiwei;
Mulligan, C.P.;
Murray, T.M.;
Khare, S.V.;
Gall, Daniel;
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute;
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute;
US Army Combat Capabilities Development Command, Armaments Center, Bené
t Laboratories;
Colleges of Nanoscale Science & Engineering, SUNY Polytechnic Institute;
Department of Physics and Astronomy, University of Toledo;
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute;
(Journal of alloys and compounds,
v.860,
2021,
pp.158403)