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101
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Phase transitions and domain structures in relaxor-based ferroelectric (PbZn<sub>1/3</sub>Nb<sub>2/3</sub>O<sub>3</sub>)<sub>0.915</sub>(PbTiO<sub>3</sub>)<sub>0.085</sub>single crystal
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Ruthenium-Catalyzed Direct Asymmetric Reductive Amination for the Synthesis of a Chiral Primary Amine Intermediate En Route to a PDE2A Inhibitor, TAK-915
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Yamada, Masatoshi;
Murai, Koichi;
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Boltzmann- and non-Boltzmann-based thermometers in the first, second and third biological windows for the SrF2:Yb3+,Ho3+ nanocrystals under 980, 940 and 915 nm excitations
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Wang Linxuan;
Li Liang;
Yuan Maohui;
Yang Zining;
Han Kai;
Wang Hongyan;
Xu Xiaojun;
National University of Defense Technology;
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104
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Study of ordered nano-regions in Pb(Zn<sub>1/3</sub>Nb<sub>2/3</sub>)<sub>0.915</sub>Ti<sub>0.085</sub>O<sub>3</sub> single crystal using Raman spectroscopy
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Dobal, P. S.;
Katiyar, R. S.;
Tu, C.-S.;
Department of Physics, University of Puerto Rico, P.O. Box 23343, San Juan, Puerto Rico 00931-3343, USA;
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105
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06/00455 The mechanism of CO<SUB>2</SUB> chemisorption on zigzagcarbon active sites: a computational chemistry study : Radovic, L. R. <I>Carbon</I>, 2005, 43, (5), 907–915
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Rotational temperature measurements of excited and ground states of C2(d 3Πg−a 3Πu) transition in a H2/CH4 915 MHz microwave pulsed plasma
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108
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Dual-Mode Optical Thermometry Based on the Fluorescence Intensity Ratio Excited by a 915 nm Wavelength in LuVO<sub>4</sub>:Yb<sup>3+</sup>/Er<sup>3+</sup>@SiO<sub>2</sub> Nanoparticles
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Xiang, Guotao;
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College of Physics , Liaoning University , 66 Chongshan Middle Road , Shenyang 110036 , China;
Department of Mathematics and Physics , Chongqing University of Posts and Telecommunications , 2 Chongwen Road , Chongqing 400065 , China;
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Przemysław Czarnek, Wolność gospodarcza - pierwszy filar społecznej gospodarki rynkowej, Lublin: Wydawnictwo Katolickiego Uniwersytetu Lubelskiego Jana Pawła II 2014, ss. 304, ISBN 978-83-7702-915-2
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Dudek, Dariusz;
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A novel tunable dual-band low noise amplifier for 868/915 MHz and 2.4 GHz Zigbee application by 0.35 um CMOS technology.
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Kai Xuan;
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